Parametric results for: 2SK973 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE 8

8 hits Apply

DS Breakdown Voltage-Min (1)

60 V 8

8 hits Apply

Drain Current-Max (ID) (1)

2 A 8

8 hits Apply

Drain-source On Resistance-Max (1)

500 mΩ 8

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

8 hits Apply

R-PSIP-T3 2 R-PSSO-G2 6

8 hits Apply

Manufacturer (2)

Hitachi Ltd 4 Renesas Electronics Corporation 4

8 hits Apply

1 2

8 hits Apply

Number of Elements (1)

1 8

8 hits Apply

Number of Terminals (2)

2 6 3 2

8 hits Apply

ENHANCEMENT MODE 8

8 hits Apply

150.0 °C 4

8 hits Apply

PLASTIC/EPOXY 8

8 hits Apply

RECTANGULAR 8

8 hits Apply

IN-LINE 2 SMALL OUTLINE 6

8 hits Apply

Not Recommended 2 Transferred 6

8 hits Apply

245 2

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

8 hits Apply

10 W 4

8 hits Apply

Surface Mount (2)

NO 2 YES 6

8 hits Apply