Parametric results for: 2SK3879 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 1

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

2 hits Apply

DS Breakdown Voltage-Min (1)

800 V 1

2 hits Apply

Drain Current-Max (ID) (1)

6.5 A 1

2 hits Apply

Drain-source On Resistance-Max (1)

1.7 Ω 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 1

2 hits Apply

R-PSSO-G2 1

2 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 2

2 hits Apply

Number of Elements (1)

1 1

2 hits Apply

Number of Terminals (1)

2 1

2 hits Apply

ENHANCEMENT MODE 1

2 hits Apply

150.0 °C 1

2 hits Apply

PLASTIC/EPOXY 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

SMALL OUTLINE 1

2 hits Apply

Active 1 Obsolete 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 1

2 hits Apply

80 W 1

2 hits Apply

Surface Mount (1)

YES 1

2 hits Apply