Parametric results for: 2SK3571 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 10

14 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 10

14 hits Apply

DS Breakdown Voltage-Min (1)

20 V 10

14 hits Apply

Drain Current-Max (ID) (1)

48 A 12

14 hits Apply

Drain-source On Resistance-Max (1)

9 mΩ 10

14 hits Apply

METAL-OXIDE SEMICONDUCTOR 12

14 hits Apply

TO-220AB 2 TO-262 2 TO-263 3

14 hits Apply

R-PSFM-T3 2 R-PSIP-T3 2 R-PSSO-G2 6

14 hits Apply

e0 8 e6 1

14 hits Apply

Manufacturer (3)

NEC Electronics America Inc 5 NEC Electronics Group 4 Renesas Electronics Corporation 5

14 hits Apply

Number of Elements (1)

1 12

14 hits Apply

Number of Terminals (2)

2 6 3 4

14 hits Apply

ENHANCEMENT MODE 12

14 hits Apply

150.0 °C 3

14 hits Apply

PLASTIC/EPOXY 10

14 hits Apply

RECTANGULAR 10

14 hits Apply

FLANGE MOUNT 2 IN-LINE 2 SMALL OUTLINE 6

14 hits Apply

Obsolete 6 Transferred 8

14 hits Apply

Yes 2

14 hits Apply

260 4 NOT SPECIFIED 1

14 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 12

14 hits Apply

40 W 3

14 hits Apply

Surface Mount (2)

NO 5 YES 7

14 hits Apply