Parametric results for: 2SK3203 under Power Field-Effect Transistors

All Filters Configuration Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE 4

6 hits Apply

Drain Current-Max (ID) (1)

45 A 4

6 hits Apply

Drain-source On Resistance-Max (1)

28 mΩ 3

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

6 hits Apply

R-PSIP-T3 1 R-PSSO-G2 2

6 hits Apply

Manufacturer (2)

Hitachi Ltd 3 Renesas Electronics Corporation 3

6 hits Apply

Number of Elements (1)

1 4

6 hits Apply

Number of Terminals (2)

2 2 3 1

6 hits Apply

ENHANCEMENT MODE 3

6 hits Apply

150.0 °C 4

6 hits Apply

PLASTIC/EPOXY 3

6 hits Apply

RECTANGULAR 3

6 hits Apply

IN-LINE 1 SMALL OUTLINE 2

6 hits Apply

Obsolete 4 Transferred 2

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

6 hits Apply

50 W 4

6 hits Apply

Surface Mount (2)

NO 2 YES 4

6 hits Apply