Parametric results for: 2SK296209 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SINGLE 3 SINGLE WITH BUILT-IN DIODE 1

5 hits Apply

DS Breakdown Voltage-Min (1)

100 V 1

5 hits Apply

Drain Current-Max (ID) (1)

1 A 4

5 hits Apply

Drain-source On Resistance-Max (1)

950 mΩ 1

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

5 hits Apply

TO-92 1

5 hits Apply

O-PBCY-T3 1

5 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 5

5 hits Apply

Number of Elements (1)

1 4

5 hits Apply

Number of Terminals (1)

3 1

5 hits Apply

ENHANCEMENT MODE 4

5 hits Apply

150.0 °C 4

5 hits Apply

PLASTIC/EPOXY 1

5 hits Apply

ROUND 1

5 hits Apply

CYLINDRICAL 1

5 hits Apply

Active 1 End Of Life 4

5 hits Apply

No 1

5 hits Apply

NOT SPECIFIED 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

5 hits Apply

900 mW 4

5 hits Apply

Surface Mount (1)

NO 4

5 hits Apply