Parametric results for: 2SK2926S under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 3

15 hits Apply

Configuration (2)

SINGLE 11 SINGLE WITH BUILT-IN DIODE 3

15 hits Apply

DS Breakdown Voltage-Min (1)

60 V 7

15 hits Apply

Drain Current-Max (ID) (1)

15 A 14

15 hits Apply

Drain-source On Resistance-Max (2)

110 mΩ 5 130 mΩ 4

Min (Ω) - Max (Ω)

15 hits Apply

METAL-OXIDE SEMICONDUCTOR 14

15 hits Apply

R-PSSO-G2 9

15 hits Apply

e0 2 e6 2

15 hits Apply

Manufacturer (2)

Hitachi Ltd 6 Renesas Electronics Corporation 9

15 hits Apply

1 2

15 hits Apply

Number of Elements (1)

1 14

15 hits Apply

Number of Terminals (1)

2 9

15 hits Apply

ENHANCEMENT MODE 13

15 hits Apply

150.0 °C 9

15 hits Apply

PLASTIC/EPOXY 9

15 hits Apply

RECTANGULAR 9

15 hits Apply

SMALL OUTLINE 9

15 hits Apply

End Of Life 1 Not Recommended 2 Obsolete 6 Transferred 6

15 hits Apply

No 1 Yes 2

15 hits Apply

245 1 NOT SPECIFIED 1

15 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 14

15 hits Apply

25 W 9

15 hits Apply

Surface Mount (1)

YES 15

15 hits Apply