Parametric results for: 2SK2883 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

300.0 mJ 4

8 hits Apply

DRAIN 4

8 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 4

8 hits Apply

DS Breakdown Voltage-Min (1)

800 V 4

8 hits Apply

Drain Current-Max (ID) (1)

3 A 5

8 hits Apply

Drain-source On Resistance-Max (1)

3.6 Ω 4

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

8 hits Apply

R-PSIP-T3 2 R-PSSO-G2 2

8 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 8

8 hits Apply

Number of Elements (1)

1 5

8 hits Apply

Number of Terminals (2)

2 2 3 2

8 hits Apply

ENHANCEMENT MODE 5

8 hits Apply

150.0 °C 1

8 hits Apply

PLASTIC/EPOXY 4

8 hits Apply

RECTANGULAR 4

8 hits Apply

IN-LINE 2 SMALL OUTLINE 2

8 hits Apply

Obsolete 8

8 hits Apply

No 4

8 hits Apply

NOT SPECIFIED 4

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

8 hits Apply

75 W 1

8 hits Apply

Surface Mount (2)

NO 3 YES 2

8 hits Apply