Parametric results for: 2SK2615 under Small Signal Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

DRAIN 4

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

5 hits Apply

DS Breakdown Voltage-Min (1)

60 V 4

5 hits Apply

Drain Current-Max (ID) (1)

2 A 4

5 hits Apply

Drain-source On Resistance-Max (1)

440 mΩ 4

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

5 hits Apply

R-PSSO-F3 4

5 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 5

5 hits Apply

Number of Elements (1)

1 4

5 hits Apply

Number of Terminals (1)

3 4

5 hits Apply

ENHANCEMENT MODE 4

5 hits Apply

150.0 °C 3

5 hits Apply

PLASTIC/EPOXY 4

5 hits Apply

RECTANGULAR 4

5 hits Apply

SMALL OUTLINE 4

5 hits Apply

Active 1 Obsolete 4

5 hits Apply

No 1

5 hits Apply

NOT SPECIFIED 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

5 hits Apply

1.5 W 1

5 hits Apply

1.5 W 3

5 hits Apply

Surface Mount (1)

YES 4

5 hits Apply