Parametric results for: 2SK2247 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 1

12 hits Apply

Configuration (2)

SINGLE 11 SINGLE WITH BUILT-IN DIODE 1

12 hits Apply

DS Breakdown Voltage-Min (1)

30 V 11

12 hits Apply

Drain Current-Max (ID) (1)

2 A 12

12 hits Apply

Drain-source On Resistance-Max (1)

450 mΩ 12

12 hits Apply

METAL-OXIDE SEMICONDUCTOR 12

12 hits Apply

R-PSSO-F3 12

12 hits Apply

Manufacturer (2)

Hitachi Ltd 6 Renesas Electronics Corporation 6

12 hits Apply

Number of Elements (1)

1 12

12 hits Apply

Number of Terminals (1)

3 12

12 hits Apply

ENHANCEMENT MODE 11

12 hits Apply

150.0 °C 1

12 hits Apply

PLASTIC/EPOXY 12

12 hits Apply

RECTANGULAR 12

12 hits Apply

SMALL OUTLINE 12

12 hits Apply

Not Recommended 1 Transferred 11

12 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 12

12 hits Apply

1 W 1

12 hits Apply

Surface Mount (1)

YES 12

12 hits Apply