Parametric results for: 2SK222 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 1 HIGH RELIABILITY 2 HIGH VOLTAGE 1 LOGIC LEVEL COMPATIBLE 1 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED 2

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129.0 mJ 1

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DRAIN 1 ISOLATED 7 SOURCE 4

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Configuration (2)

SINGLE 16 SINGLE WITH BUILT-IN DIODE 12

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DS Breakdown Voltage-Min (8)

40 V 5 60 V 4 150 V 2 500 V 1 600 V 3 800 V 1 900 V 1 1.5 kV 4

Min (V) - Max (V)

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Drain Current-Max (ID) (7)

2 A 4 3 A 1 4 A 3 5 A 5 8 A 6 10 A 1 20 A 3

Min (A) - Max (A)

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Drain-source On Resistance-Max (9)

100 mΩ 2 110 mΩ 1 160 mΩ 2 300 mΩ 1 760 mΩ 1 2.2 Ω 1 2.4 Ω 3 4 Ω 1 12 Ω 4

Min (Ω) - Max (Ω)

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JUNCTION 5 METAL-OXIDE SEMICONDUCTOR 23

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TO-92 8

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O-PBCY-W3 3 R-PBCY-T3 5 R-PSFM-T3 13 R-PSIP-T3 8 R-PSSO-G2 1

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e0 3 e2 1

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Manufacturer (5)

Fuji Electric Co Ltd 5 Hitachi Ltd 3 Renesas Electronics Corporation 7 SANYO Electric Co Ltd 11 Toshiba America Electronic Components 5

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1 3

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Number of Elements (1)

1 28

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Number of Terminals (2)

2 1 3 29

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DEPLETION MODE 5 ENHANCEMENT MODE 21

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125.0 °C 5 150.0 °C 9

Min (°C) - Max (°C)

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PLASTIC/EPOXY 30

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RECTANGULAR 27 ROUND 3

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CYLINDRICAL 8 FLANGE MOUNT 13 IN-LINE 8 SMALL OUTLINE 1

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Active 5 Not Recommended 4 Obsolete 19 Transferred 3

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No 3 Yes 4

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240 1 NOT SPECIFIED 2

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Polarity/Channel Type (1)

N-CHANNEL 28

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1.3 W 1 80 W 4

Min (W) - Max (W)

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300 mW 5 1.2 W 1 1.3 W 2 50 W 3 80 W 1 100 W 4

Min (W) - Max (W)

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Surface Mount (2)

NO 30 YES 1

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