Parametric results for: 2SK1918L under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 2

4 hits Apply

Configuration (2)

Single 1 SINGLE WITH BUILT-IN DIODE 2

4 hits Apply

DS Breakdown Voltage-Min (1)

60 V 2

4 hits Apply

Drain Current-Max (Abs) (ID) (1)

25 A 1

4 hits Apply

Drain Current-Max (ID) (1)

25 A 2

4 hits Apply

Drain-source On Resistance-Max (1)

60 mΩ 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

4 hits Apply

R-PSIP-T3 4

4 hits Apply

e6 2

4 hits Apply

Manufacturer (2)

Hitachi Ltd 2 Renesas Electronics Corporation 2

4 hits Apply

1 4

4 hits Apply

Number of Elements (1)

1 2

4 hits Apply

Number of Terminals (1)

3 4

4 hits Apply

ENHANCEMENT MODE 2

4 hits Apply

150.0 °C 2

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

IN-LINE 4

4 hits Apply

Obsolete 1 Transferred 3

4 hits Apply

NOT SPECIFIED 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

4 hits Apply

50 W 2

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply