Parametric results for: 2SK1540S under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 4

12 hits Apply

Configuration (2)

SINGLE 8 SINGLE WITH BUILT-IN DIODE 4

12 hits Apply

DS Breakdown Voltage-Min (2)

450 V 7 500 V 1

Min (V) - Max (V)

12 hits Apply

Drain Current-Max (Abs) (ID) (1)

7 A 1

12 hits Apply

Drain Current-Max (ID) (1)

7 A 12

12 hits Apply

Drain-source On Resistance-Max (1)

800 mΩ 8

12 hits Apply

METAL-OXIDE SEMICONDUCTOR 12

12 hits Apply

R-PSSO-G2 8

12 hits Apply

e6 1

12 hits Apply

Manufacturer (2)

Hitachi Ltd 5 Renesas Electronics Corporation 7

12 hits Apply

1 1

12 hits Apply

Number of Elements (1)

1 12

12 hits Apply

Number of Terminals (1)

2 8

12 hits Apply

ENHANCEMENT MODE 12

12 hits Apply

150.0 °C 8

12 hits Apply

PLASTIC/EPOXY 8

12 hits Apply

RECTANGULAR 8

12 hits Apply

SMALL OUTLINE 8

12 hits Apply

Obsolete 7 Transferred 5

12 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 12

12 hits Apply

60 W 8

12 hits Apply

Surface Mount (1)

YES 12

12 hits Apply