Parametric results for: 2SK1254L under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 4

6 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 4

6 hits Apply

DS Breakdown Voltage-Min (1)

120 V 4

6 hits Apply

Drain Current-Max (ID) (1)

3 A 6

6 hits Apply

Drain-source On Resistance-Max (1)

550 mΩ 4

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

R-PSIP-T3 4

6 hits Apply

e0 1 e6 1

6 hits Apply

Manufacturer (2)

Hitachi Ltd 2 Renesas Electronics Corporation 4

6 hits Apply

1 1

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

3 4

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 5

6 hits Apply

PLASTIC/EPOXY 4

6 hits Apply

RECTANGULAR 4

6 hits Apply

IN-LINE 4

6 hits Apply

Active 2 Not Recommended 2 Obsolete 1 Transferred 1

6 hits Apply

No 1 Yes 1

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

20 W 5

6 hits Apply

Surface Mount (1)

NO 6

6 hits Apply