Parametric results for: 2SK1165 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 2

3 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 2

3 hits Apply

DS Breakdown Voltage-Min (1)

450 V 2

3 hits Apply

Drain Current-Max (ID) (1)

12 A 3

3 hits Apply

Drain-source On Resistance-Max (1)

550 mΩ 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

R-PSFM-T3 3

3 hits Apply

e0 1 e2 1

3 hits Apply

Manufacturer (2)

Hitachi Ltd 1 Renesas Electronics Corporation 2

3 hits Apply

1 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 3

3 hits Apply

ENHANCEMENT MODE 2

3 hits Apply

150.0 °C 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

FLANGE MOUNT 3

3 hits Apply

Obsolete 2 Transferred 1

3 hits Apply

No 1 Yes 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

100 W 3

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply