Parametric results for: 2SK1083-M under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 1 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED 1

3 hits Apply

ISOLATED 2

3 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 1

3 hits Apply

DS Breakdown Voltage-Min (1)

60 V 2

3 hits Apply

Drain Current-Max (ID) (1)

8 A 3

3 hits Apply

Drain-source On Resistance-Max (2)

220 mΩ 1 350 mΩ 1

Min (Ω) - Max (Ω)

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

TO-220AB 2

3 hits Apply

R-PSFM-T3 2

3 hits Apply

Manufacturer (1)

Fuji Electric Co Ltd 3

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 2

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 1

3 hits Apply

PLASTIC/EPOXY 2

3 hits Apply

RECTANGULAR 2

3 hits Apply

FLANGE MOUNT 2

3 hits Apply

Active 1 Obsolete 2

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

20 W 1

3 hits Apply

20 W 2

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply