Parametric results for: 2SK1006-01M under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

HIGH VOLTAGE 1

2 hits Apply

ISOLATED 1

2 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 1

2 hits Apply

DS Breakdown Voltage-Min (1)

450 V 1

2 hits Apply

Drain Current-Max (ID) (1)

5 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

1.6 Ω 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

TO-220AB 1

2 hits Apply

R-PSFM-T3 1

2 hits Apply

Manufacturer (1)

Fuji Electric Co Ltd 2

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

3 1

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 1

2 hits Apply

PLASTIC/EPOXY 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

FLANGE MOUNT 1

2 hits Apply

Active 1 Obsolete 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

40 W 1

2 hits Apply

40 W 1

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply