Parametric results for: 2SJ648 under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SINGLE 3 SINGLE WITH BUILT-IN DIODE 4

7 hits Apply

DS Breakdown Voltage-Min (1)

20 V 4

7 hits Apply

Drain Current-Max (ID) (1)

400 mA 7

7 hits Apply

Drain-source On Resistance-Max (1)

1.55 Ω 4

7 hits Apply

METAL-OXIDE SEMICONDUCTOR 7

7 hits Apply

R-PDSO-G3 4

7 hits Apply

e0 2 e6 3

7 hits Apply

Manufacturer (3)

NEC Electronics America Inc 1 NEC Electronics Group 1 Renesas Electronics Corporation 5

7 hits Apply

Number of Elements (1)

1 7

7 hits Apply

Number of Terminals (1)

3 4

7 hits Apply

ENHANCEMENT MODE 5

7 hits Apply

150.0 °C 5

7 hits Apply

PLASTIC/EPOXY 4

7 hits Apply

RECTANGULAR 4

7 hits Apply

SMALL OUTLINE 4

7 hits Apply

Obsolete 6 Transferred 1

7 hits Apply

Yes 3

7 hits Apply

260 1 NOT SPECIFIED 1

7 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 7

7 hits Apply

200 mW 5

7 hits Apply

Surface Mount (1)

YES 7

7 hits Apply