Parametric results for: 2SJ386 under Other Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 2

3 hits Apply

DS Breakdown Voltage-Min (1)

30 V 2

3 hits Apply

Drain Current-Max (ID) (1)

3 A 3

3 hits Apply

Drain-source On Resistance-Max (1)

800 mΩ 2

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

O-PBCY-T3 2

3 hits Apply

e2 1

3 hits Apply

Manufacturer (2)

Hitachi Ltd 1 Renesas Electronics Corporation 2

3 hits Apply

1 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 2

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 3

3 hits Apply

PLASTIC/EPOXY 2

3 hits Apply

ROUND 2

3 hits Apply

CYLINDRICAL 2

3 hits Apply

End Of Life 1 Obsolete 1 Transferred 1

3 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 3

3 hits Apply

900 mW 3

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply