Parametric results for: 2SJ356 under Other Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

ESD PROTECTED 4

16 hits Apply

DRAIN 6

16 hits Apply

Configuration (2)

SINGLE 5 SINGLE WITH BUILT-IN DIODE 6

16 hits Apply

DS Breakdown Voltage-Min (1)

60 V 6

16 hits Apply

Drain Current-Max (ID) (1)

2 A 11

16 hits Apply

Drain-source On Resistance-Max (2)

556 mΩ 2 950 mΩ 4

Min (Ω) - Max (Ω)

16 hits Apply

METAL-OXIDE SEMICONDUCTOR 11

16 hits Apply

R-PSSO-F3 6

16 hits Apply

e0 2 e6 1

16 hits Apply

Manufacturer (2)

NEC Electronics Group 2 Renesas Electronics Corporation 14

16 hits Apply

Number of Elements (1)

1 11

16 hits Apply

Number of Terminals (1)

3 6

16 hits Apply

ENHANCEMENT MODE 8

16 hits Apply

150.0 °C 7

16 hits Apply

PLASTIC/EPOXY 6

16 hits Apply

RECTANGULAR 6

16 hits Apply

SMALL OUTLINE 6

16 hits Apply

Active 1 Obsolete 14 Transferred 1

16 hits Apply

Yes 7

16 hits Apply

260 1 NOT SPECIFIED 7

16 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 11

16 hits Apply

2 W 7

16 hits Apply

Surface Mount (1)

YES 11

16 hits Apply