Parametric results for: 2SJ234 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 4

8 hits Apply

Configuration (2)

SINGLE 4 SINGLE WITH BUILT-IN DIODE 4

8 hits Apply

DS Breakdown Voltage-Min (1)

30 V 8

8 hits Apply

Drain Current-Max (ID) (1)

2.5 A 8

8 hits Apply

Drain-source On Resistance-Max (1)

700 mΩ 8

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

8 hits Apply

R-PSIP-T3 2 R-PSSO-G2 6

8 hits Apply

Manufacturer (2)

Hitachi Ltd 4 Renesas Electronics Corporation 4

8 hits Apply

Number of Elements (1)

1 8

8 hits Apply

Number of Terminals (2)

2 6 3 2

8 hits Apply

ENHANCEMENT MODE 8

8 hits Apply

150.0 °C 4

8 hits Apply

PLASTIC/EPOXY 8

8 hits Apply

RECTANGULAR 8

8 hits Apply

IN-LINE 2 SMALL OUTLINE 6

8 hits Apply

Not Recommended 2 Transferred 6

8 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 8

8 hits Apply

10 W 4

8 hits Apply

Surface Mount (2)

NO 2 YES 6

8 hits Apply