Parametric results for: 2SJ233 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SINGLE 4 SINGLE WITH BUILT-IN DIODE 1

5 hits Apply

DS Breakdown Voltage-Min (1)

100 V 3

5 hits Apply

Drain Current-Max (ID) (1)

1.8 A 3

5 hits Apply

Drain-source On Resistance-Max (2)

400 mΩ 2 550 mΩ 1

Min (Ω) - Max (Ω)

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

5 hits Apply

R-PSIP-T3 3 R-XSIP-T3 2

5 hits Apply

Manufacturer (1)

SANYO Electric Co Ltd 5

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

3 5

5 hits Apply

ENHANCEMENT MODE 3

5 hits Apply

150.0 °C 1

5 hits Apply

PLASTIC/EPOXY 3 UNSPECIFIED 2

5 hits Apply

RECTANGULAR 5

5 hits Apply

IN-LINE 5

5 hits Apply

Obsolete 5

5 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 3

5 hits Apply

1.5 W 1

5 hits Apply

Surface Mount (1)

NO 5

5 hits Apply