Parametric results for: 2SJ218 under Power Field-Effect Transistors

All Filters Configuration Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE 2

3 hits Apply

Drain Current-Max (ID) (1)

45 A 2

3 hits Apply

Drain-source On Resistance-Max (1)

60 mΩ 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

3 hits Apply

R-PSIP-T3 3

3 hits Apply

e2 1

3 hits Apply

Manufacturer (2)

Hitachi Ltd 1 Renesas Electronics Corporation 2

3 hits Apply

1 2

3 hits Apply

Number of Elements (1)

1 2

3 hits Apply

Number of Terminals (1)

3 3

3 hits Apply

150.0 °C 2

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

IN-LINE 3

3 hits Apply

Obsolete 2 Transferred 1

3 hits Apply

No 1

3 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 2

3 hits Apply

60 W 2

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply