Parametric results for: 2SD552 under Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

COLLECTOR 4

4 hits Apply

Collector Current-Max (IC) (1)

15 A 4

4 hits Apply

160 pF 1

4 hits Apply

Collector-Emitter Voltage-Max (1)

180 V 4

4 hits Apply

Configuration (1)

SINGLE 4

4 hits Apply

DC Current Gain-Min (hFE) (3)

10.0 1 25.0 2 40.0 1

Min - Max

4 hits Apply

TO-3 4

4 hits Apply

O-MBFM-P2 4

4 hits Apply

e0 1

4 hits Apply

Manufacturer (2)

Inchange Semiconductor Company Ltd 1 Toshiba America Electronic Components 3

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

2 4

4 hits Apply

150.0 °C 1

4 hits Apply

METAL 4

4 hits Apply

ROUND 4

4 hits Apply

FLANGE MOUNT 4

4 hits Apply

Contact Manufacturer 1 Obsolete 3

4 hits Apply

Polarity/Channel Type (1)

NPN 4

4 hits Apply

150 W 1

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply

Transition Frequency-Nom (fT) (1)

4 MHz 4

4 hits Apply