Parametric results for: 2SD2096T114E under Power Bipolar Transistors

All Filters Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT) Collector Current-Max (IC) (1)

3 A 3

3 hits Apply

Collector-Emitter Voltage-Max (1)

60 V 3

3 hits Apply

Configuration (1)

SINGLE 3

3 hits Apply

DC Current Gain-Min (hFE) (1)

100.0 3

3 hits Apply

R-PSIP-T3 3

3 hits Apply

e2 1 e3/e2 1

3 hits Apply

Manufacturer (1)

ROHM Semiconductor 3

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 3

3 hits Apply

150.0 °C 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

IN-LINE 3

3 hits Apply

Active 2 Obsolete 1

3 hits Apply

Yes 2

3 hits Apply

260 2

3 hits Apply

Polarity/Channel Type (1)

NPN 3

3 hits Apply

1.8 W 2

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply

Transition Frequency-Nom (fT) (1)

8 MHz 3

3 hits Apply