Parametric results for: 2SD2008T105/R under Power Bipolar Transistors

All Filters Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount Transition Frequency-Nom (fT) Collector Current-Max (IC) (1)

1 A 2

2 hits Apply

Collector-Emitter Voltage-Max (1)

80 V 2

2 hits Apply

Configuration (1)

SINGLE 2

2 hits Apply

DC Current Gain-Min (hFE) (1)

180.0 2

2 hits Apply

R-PSIP-T3 2

2 hits Apply

Manufacturer (1)

ROHM Semiconductor 2

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

3 2

2 hits Apply

150.0 °C 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

IN-LINE 2

2 hits Apply

Obsolete 2

2 hits Apply

Polarity/Channel Type (1)

NPN 2

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply

Transition Frequency-Nom (fT) (1)

100 MHz 1

2 hits Apply