Parametric results for: 2SD1195 under Power Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT IN BIAS RESISTOR RATIO IS 0.03 13

14 hits Apply

Collector Current-Max (IC) (1)

5 A 13

14 hits Apply

Collector-Emitter Voltage-Max (1)

100 V 13

14 hits Apply

Configuration (1)

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 13

14 hits Apply

DC Current Gain-Min (hFE) (1)

1500.0 13

14 hits Apply

TO-220AB 13

14 hits Apply

R-PSFM-T3 13

14 hits Apply

Manufacturer (4)

Inchange Semiconductor Company Ltd 1 onsemi 1 SANYO Electric Co Ltd 6 SANYO Semiconductor Co Ltd 6

14 hits Apply

Number of Elements (1)

1 13

14 hits Apply

Number of Terminals (1)

3 13

14 hits Apply

150.0 °C 2

14 hits Apply

PLASTIC/EPOXY 13

14 hits Apply

RECTANGULAR 13

14 hits Apply

FLANGE MOUNT 13

14 hits Apply

Contact Manufacturer 1 Obsolete 6 Transferred 7

14 hits Apply

Polarity/Channel Type (1)

NPN 13

14 hits Apply

35 W 6

14 hits Apply

35 W 1

14 hits Apply

Surface Mount (1)

NO 13

14 hits Apply

Transition Frequency-Nom (fT) (1)

20 MHz 13

14 hits Apply