Parametric results for: 2SC5610 under Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

ISOLATED 3

3 hits Apply

Collector Current-Max (IC) (1)

7 A 3

3 hits Apply

Collector-Emitter Voltage-Max (1)

60 V 3

3 hits Apply

Configuration (1)

SINGLE 3

3 hits Apply

DC Current Gain-Min (hFE) (1)

150.0 3

3 hits Apply

R-PSFM-T3 3

3 hits Apply

Manufacturer (3)

onsemi 1 SANYO Electric Co Ltd 1 SANYO Semiconductor Co Ltd 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 3

3 hits Apply

150.0 °C 1

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

FLANGE MOUNT 3

3 hits Apply

Obsolete 1 Transferred 2

3 hits Apply

Polarity/Channel Type (1)

NPN 3

3 hits Apply

18 W 1

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply

Transition Frequency-Nom (fT) (1)

330 MHz 3

3 hits Apply