Parametric results for: 2SC2290 under RF Power Bipolar Transistors

All Filters Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount Transition Frequency-Nom (fT) Collector Current-Max (IC) (1)

20 A 3

3 hits Apply

500 pF 3

3 hits Apply

Collector-Emitter Voltage-Max (1)

18 V 3

3 hits Apply

Configuration (1)

SINGLE 3

3 hits Apply

DC Current Gain-Min (hFE) (1)

10.0 3

3 hits Apply

Highest Frequency Band (1)

HIGH FREQUENCY BAND 2

3 hits Apply

O-CRFM-F4 3

3 hits Apply

Manufacturer (2)

Advanced Semiconductor Inc 1 Toshiba America Electronic Components 2

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

4 3

3 hits Apply

175.0 °C 3

3 hits Apply

CERAMIC, METAL-SEALED COFIRED 3

3 hits Apply

ROUND 3

3 hits Apply

FLANGE MOUNT 3

3 hits Apply

Active 1 Obsolete 2

3 hits Apply

Polarity/Channel Type (1)

NPN 3

3 hits Apply

175 W 1

3 hits Apply

175 W 3

3 hits Apply

Power Gain-Min (Gp) (1)

11.8 dB 1

3 hits Apply

Surface Mount (2)

NO 1 YES 2

3 hits Apply

Transition Frequency-Nom (fT) (1)

100 MHz 2

3 hits Apply