Parametric results for: 2SB856 under Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

COLLECTOR 8

16 hits Apply

Collector Current-Max (IC) (1)

3 A 16

16 hits Apply

Collector-Emitter Voltage-Max (1)

50 V 16

16 hits Apply

Configuration (1)

SINGLE 16

16 hits Apply

DC Current Gain-Min (hFE) (3)

35.0 8 60.0 4 100.0 4

Min - Max

16 hits Apply

TO-220AB 16

16 hits Apply

R-PSFM-T3 16

16 hits Apply

e0 5

16 hits Apply

Manufacturer (4)

Continental Device India Ltd 4 Hitachi Ltd 4 Inchange Semiconductor Company Ltd 4 Renesas Electronics Corporation 4

16 hits Apply

Number of Elements (1)

1 16

16 hits Apply

Number of Terminals (1)

3 16

16 hits Apply

150.0 °C 13

16 hits Apply

PLASTIC/EPOXY 16

16 hits Apply

RECTANGULAR 16

16 hits Apply

FLANGE MOUNT 16

16 hits Apply

Contact Manufacturer 8 Obsolete 1 Transferred 7

16 hits Apply

Polarity/Channel Type (1)

PNP 16

16 hits Apply

25 W 4

16 hits Apply

25 W 13

16 hits Apply

Surface Mount (1)

NO 16

16 hits Apply

Transition Frequency-Nom (fT) (2)

10 MHz 4 35 MHz 12

Min (MHz) - Max (MHz)

16 hits Apply