Parametric results for: 2SB1471 under Power Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT IN BIAS RESISTOR RATIO IS 0.033 2

3 hits Apply

Collector Current-Max (IC) (1)

4 A 3

3 hits Apply

Collector-Emitter Voltage-Max (1)

60 V 2

3 hits Apply

Configuration (2)

DARLINGTON 1 DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 2

3 hits Apply

DC Current Gain-Min (hFE) (1)

2000.0 3

3 hits Apply

TO-220AB 2

3 hits Apply

R-PSIP-T3 2

3 hits Apply

Manufacturer (3)

onsemi 1 SANYO Electric Co Ltd 1 SANYO Semiconductor Co Ltd 1

3 hits Apply

Number of Elements (1)

1 2

3 hits Apply

Number of Terminals (1)

3 2

3 hits Apply

150.0 °C 1

3 hits Apply

PLASTIC/EPOXY 2

3 hits Apply

RECTANGULAR 2

3 hits Apply

IN-LINE 2

3 hits Apply

Active 1 Obsolete 1 Transferred 1

3 hits Apply

Polarity/Channel Type (1)

PNP 3

3 hits Apply

30 W 2

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply

Transition Frequency-Nom (fT) (1)

20 MHz 3

3 hits Apply