Findchips: Parametric Search Results for 2N7497

Parametric results for: 2N7497 under Power Field-Effect Transistors

Select parts from the table below to compare.

Compare


Select Parts		Part Number

		JANSH2N7491T2 Infineon Technologies AG
		JANSR2N7497T2 Infineon Technologies AG
		JANSR2N7491T2 International Rectifier
		JANSG2N7495U5 Infineon Technologies AG
		JANSH2N7494U5 Infineon Technologies AG
		JANSF2N7494U5 Infineon Technologies AG
		JANSH2N7496U5 Infineon Technologies AG
		JANSG2N7495U5 International Rectifier
		JANSG2N7494U5 Infineon Technologies AG
		JANSR2N7498T2 Infineon Technologies AG

				Most Relevant								Technical								Compliance					Operating Conditions			Physical							Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Polarity/Channel Type	Surface Mount	Configuration	Number of Terminals	DS Breakdown Voltage-Min	Number of Elements	Drain Current-Max (ID)	Drain-source On Resistance-Max	Additional Feature	Avalanche Energy Rating (Eas)	FET Technology	Operating Mode	Power Dissipation-Max (Abs)	Pulsed Drain Current-Max (IDM)	Transistor Application	Transistor Element Material	JEDEC-95 Code	JESD-30 Code	JESD-609 Code	Qualification Status	Reference Standard	Operating Temperature-Max	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Case Connection	Package Body Material	Package Shape	Package Style	Terminal Finish	Terminal Form	Terminal Position	Ihs Manufacturer	Package Description	Reach Compliance Code	ECCN Code	Part Package Code	Pin Count

Check for Price

Obsolete

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

30 V

12 A

45 mΩ

AVALANCHE RATED

520 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

48 A

SWITCHING

SILICON

TO-205AF

O-MBCY-W3

Not Qualified

ISOLATED

METAL

ROUND

CYLINDRICAL

TIN LEAD

WIRE

BOTTOM

INFINEON TECHNOLOGIES AG

CYLINDRICAL, O-MBCY-W3

compliant

3A001.A.1.A

Check for Price

Active

N-CHANNEL

SINGLE

130 V

10.5 A

100 mΩ

RADIATION HARDENED

150 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

25 W

42 A

SWITCHING

SILICON

TO-205AF

O-MBCY-W3

Qualified

150 °C

NOT SPECIFIED

DRAIN

METAL

ROUND

CYLINDRICAL

Tin/Lead (Sn/Pb)

WIRE

BOTTOM

INFINEON TECHNOLOGIES AG

CYLINDRICAL, O-MBCY-W3

not_compliant

EAR99

Check for Price

Transferred

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

30 V

12 A

45 mΩ

AVALANCHE RATED

520 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

48 A

SWITCHING

SILICON

TO-205AF

O-MBCY-W3

Qualified

150 °C

ISOLATED

METAL

ROUND

CYLINDRICAL

WIRE

BOTTOM

INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC

CYLINDRICAL, O-MBCY-W3

unknown

EAR99

BCY

Check for Price

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

60 V

11.7 A

80 mΩ

87 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

46.8 A

SWITCHING

SILICON

R-CQCC-N15

Not Qualified

MIL-19500/700

SOURCE

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

CHIP CARRIER

TIN LEAD

NO LEAD

QUAD

INFINEON TECHNOLOGIES AG

CHIP CARRIER, R-CQCC-N15

compliant

3A001.A.1.A

Check for Price

Obsolete

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

30 V

12 A

70 mΩ

156 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

25 W

48 A

SWITCHING

SILICON

R-CQCC-N15

Qualified

150 °C

SOURCE

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

CHIP CARRIER

TIN LEAD

NO LEAD

QUAD

INFINEON TECHNOLOGIES AG

CHIP CARRIER, R-CQCC-N15

not_compliant

3A001.A.1.A

Check for Price

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

30 V

12 A

70 mΩ

156 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

48 A

SWITCHING

SILICON

R-CQCC-N15

Qualified

NOT SPECIFIED

SOURCE

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

CHIP CARRIER

Tin/Lead (Sn/Pb)

NO LEAD

QUAD

INFINEON TECHNOLOGIES AG

CHIP CARRIER, R-CQCC-N15

compliant

EAR99

Check for Price

Active

N-CHANNEL

YES

SINGLE

10 A

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

150 °C

INFINEON TECHNOLOGIES AG

unknown

3A001.A.1.A

Check for Price

Transferred

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

60 V

11.7 A

80 mΩ

87 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

46.8 A

SWITCHING

SILICON

R-CQCC-N15

Not Qualified

MIL-19500/700

SOURCE

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

CHIP CARRIER

TIN LEAD

NO LEAD

QUAD

INTERNATIONAL RECTIFIER CORP

CHIP CARRIER, R-CQCC-N15

compliant

3A001.A.1.A

LCC

Check for Price

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

30 V

12 A

70 mΩ

156 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

48 A

SWITCHING

SILICON

R-CQCC-N15

Qualified

SOURCE

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

CHIP CARRIER

TIN LEAD

NO LEAD

QUAD

INFINEON TECHNOLOGIES AG

CHIP CARRIER, R-CQCC-N15

compliant

3A001.A.1.A

Check for Price

Active

N-CHANNEL

SINGLE

200 V

7 A

240 mΩ

RADIATION HARDENED

300 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

25 W

28 A

SWITCHING

SILICON

TO-205AF

O-MBCY-W3

Qualified

150 °C

NOT SPECIFIED

DRAIN

METAL

ROUND

CYLINDRICAL

Tin/Lead (Sn/Pb)

WIRE

BOTTOM

INFINEON TECHNOLOGIES AG

CYLINDRICAL, O-MBCY-W3

not_compliant

EAR99

1 2 3 4 5 Next

Compare

JANSH2N7491T2

Infineon Technologies AG

Check for Price

Obsolete

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

30 V

12 A

45 mΩ

AVALANCHE RATED

520 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

48 A

SWITCHING

SILICON

TO-205AF

O-MBCY-W3

Not Qualified

ISOLATED

METAL

ROUND

CYLINDRICAL

TIN LEAD

WIRE

BOTTOM

INFINEON TECHNOLOGIES AG

CYLINDRICAL, O-MBCY-W3

compliant

3A001.A.1.A

JANSR2N7497T2

Infineon Technologies AG

Check for Price

Active

N-CHANNEL

SINGLE

130 V

10.5 A

100 mΩ

RADIATION HARDENED

150 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

25 W

42 A

SWITCHING

SILICON

TO-205AF

O-MBCY-W3

Qualified

150 °C

NOT SPECIFIED

DRAIN

METAL

ROUND

CYLINDRICAL

Tin/Lead (Sn/Pb)

WIRE

BOTTOM

INFINEON TECHNOLOGIES AG

CYLINDRICAL, O-MBCY-W3

not_compliant

EAR99

JANSR2N7491T2

International Rectifier

Check for Price

Transferred

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

30 V

12 A

45 mΩ

AVALANCHE RATED

520 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

48 A

SWITCHING

SILICON

TO-205AF

O-MBCY-W3

Qualified

150 °C

ISOLATED

METAL

ROUND

CYLINDRICAL

WIRE

BOTTOM

INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC

CYLINDRICAL, O-MBCY-W3

unknown

EAR99

BCY

JANSG2N7495U5

Infineon Technologies AG

Check for Price

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

60 V

11.7 A

80 mΩ

87 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

46.8 A

SWITCHING

SILICON

R-CQCC-N15

Not Qualified

MIL-19500/700

SOURCE

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

CHIP CARRIER

TIN LEAD

NO LEAD

QUAD

INFINEON TECHNOLOGIES AG

CHIP CARRIER, R-CQCC-N15

compliant

3A001.A.1.A

JANSH2N7494U5

Infineon Technologies AG

Check for Price

Obsolete

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

30 V

12 A

70 mΩ

156 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

25 W

48 A

SWITCHING

SILICON

R-CQCC-N15

Qualified

150 °C

SOURCE

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

CHIP CARRIER

TIN LEAD

NO LEAD

QUAD

INFINEON TECHNOLOGIES AG

CHIP CARRIER, R-CQCC-N15

not_compliant

3A001.A.1.A

JANSF2N7494U5

Infineon Technologies AG

Check for Price

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

30 V

12 A

70 mΩ

156 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

48 A

SWITCHING

SILICON

R-CQCC-N15

Qualified

NOT SPECIFIED

SOURCE

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

CHIP CARRIER

Tin/Lead (Sn/Pb)

NO LEAD

QUAD

INFINEON TECHNOLOGIES AG

CHIP CARRIER, R-CQCC-N15

compliant

EAR99

JANSH2N7496U5

Infineon Technologies AG

Check for Price

Active

N-CHANNEL

YES

SINGLE

10 A

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

150 °C

INFINEON TECHNOLOGIES AG

unknown

3A001.A.1.A

JANSG2N7495U5

International Rectifier

Check for Price

Transferred

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

60 V

11.7 A

80 mΩ

87 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

46.8 A

SWITCHING

SILICON

R-CQCC-N15

Not Qualified

MIL-19500/700

SOURCE

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

CHIP CARRIER

TIN LEAD

NO LEAD

QUAD

INTERNATIONAL RECTIFIER CORP

CHIP CARRIER, R-CQCC-N15

compliant

3A001.A.1.A

LCC

JANSG2N7494U5

Infineon Technologies AG

Check for Price

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

30 V

12 A

70 mΩ

156 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

48 A

SWITCHING

SILICON

R-CQCC-N15

Qualified

SOURCE

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

CHIP CARRIER

TIN LEAD

NO LEAD

QUAD

INFINEON TECHNOLOGIES AG

CHIP CARRIER, R-CQCC-N15

compliant

3A001.A.1.A

JANSR2N7498T2

Infineon Technologies AG

Check for Price

Active

N-CHANNEL

SINGLE

200 V

7 A

240 mΩ

RADIATION HARDENED

300 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

25 W

28 A

SWITCHING

SILICON

TO-205AF

O-MBCY-W3

Qualified

150 °C

NOT SPECIFIED

DRAIN

METAL

ROUND

CYLINDRICAL

Tin/Lead (Sn/Pb)

WIRE

BOTTOM

INFINEON TECHNOLOGIES AG

CYLINDRICAL, O-MBCY-W3

not_compliant

EAR99

1 2 3 4 5 Next