Parametric results for: 2N748 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

RADIATION HARDENED 19 ULTRA-LOW RESISTANCE 8

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58.0 mJ 2 60.0 mJ 6 65.0 mJ 2 70.0 mJ 7 80.0 mJ 3 87.0 mJ 6 100.0 mJ 6 110.0 mJ 9 117.0 mJ 4 177.0 mJ 5

Min (mJ) - Max (mJ)

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DRAIN 26 ISOLATED 17

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Configuration (2)

SINGLE 27 SINGLE WITH BUILT-IN DIODE 32

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DS Breakdown Voltage-Min (6)

30 V 9 60 V 15 100 V 13 130 V 5 200 V 6 250 V 2

Min (V) - Max (V)

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Drain Current-Max (ID) (5)

10 A 2 12 A 6 18 A 33 20 A 2 22 A 16

Min (A) - Max (A)

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Drain-source On Resistance-Max (9)

30 mΩ 13 40 mΩ 8 60 mΩ 7 70 mΩ 6 80 mΩ 1 90 mΩ 1 220 mΩ 3 230 mΩ 1 400 mΩ 1

Min (Ω) - Max (Ω)

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METAL-OXIDE SEMICONDUCTOR 59

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11 pF 2 50 pF 2

Min (pF) - Max (pF)

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TO-257AA 29

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R-CBCC-N3 21 R-CSFM-P3 8 R-XSFM-P3 6 S-CSFM-P3 5 S-XSFM-P3 10

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e0 49

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Manufacturer (2)

Infineon Technologies AG 34 International Rectifier 25

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Number of Elements (1)

1 59

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Number of Terminals (1)

3 50

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ENHANCEMENT MODE 58

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150.0 °C 42

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-55.0 °C 4

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CERAMIC, METAL-SEALED COFIRED 34 UNSPECIFIED 16

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RECTANGULAR 35 SQUARE 15

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CHIP CARRIER 21 FLANGE MOUNT 29

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Active 29 Obsolete 12 Transferred 18

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No 18

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NOT SPECIFIED 21

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Polarity/Channel Type (1)

N-CHANNEL 59

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1 W 2 75 W 38

Min (W) - Max (W)

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Surface Mount (2)

NO 31 YES 24

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