Parametric results for: 2N7272R under Power Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

RADIATION HARDENED 2

6 hits Apply

Configuration (2)

SINGLE 4 SINGLE WITH BUILT-IN DIODE 2

6 hits Apply

DS Breakdown Voltage-Min (1)

100 V 2

6 hits Apply

Drain Current-Max (ID) (1)

8 A 6

6 hits Apply

Drain-source On Resistance-Max (1)

180 mΩ 2

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

TO-205AF 2

6 hits Apply

O-MBCY-W3 2

6 hits Apply

e0 6

6 hits Apply

Manufacturer (2)

Harris Semiconductor 1 Intersil Corporation 5

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

3 2

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 6

6 hits Apply

METAL 2

6 hits Apply

ROUND 2

6 hits Apply

CYLINDRICAL 2

6 hits Apply

Obsolete 6

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

25 W 2

6 hits Apply

25 W 6

6 hits Apply

Surface Mount (1)

NO 6

6 hits Apply