Parametric results for: 2N7002KU under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

ULTRA LOW RESISTANCE 1

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

6 hits Apply

DS Breakdown Voltage-Min (1)

60 V 4

6 hits Apply

Drain Current-Max (ID) (1)

300 mA 4

6 hits Apply

Drain-source On Resistance-Max (2)

1.5 Ω 1 3 Ω 3

Min (Ω) - Max (Ω)

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

6 hits Apply

4 pF 2

6 hits Apply

R-PDSO-G3 4

6 hits Apply

Manufacturer (5)

Advanced Power Electronics Corp 1 KEC 2 Kodenshi Corporation 1 Kodenshi Sensing 1 Suzhou Good-Ark Electronics Co Ltd 1

6 hits Apply

Number of Elements (1)

1 4

6 hits Apply

Number of Terminals (1)

3 4

6 hits Apply

ENHANCEMENT MODE 4

6 hits Apply

150.0 °C 2

6 hits Apply

PLASTIC/EPOXY 4

6 hits Apply

RECTANGULAR 4

6 hits Apply

SMALL OUTLINE 4

6 hits Apply

Active 3 Contact Manufacturer 3

6 hits Apply

NOT SPECIFIED 4

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

6 hits Apply

310 mW 2

6 hits Apply

Surface Mount (1)

YES 4

6 hits Apply