Parametric results for: 2N7002ET1G under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

60 V 4

4 hits Apply

Drain Current-Max (ID) (2)

240 mA 2 260 mA 2

Min (A) - Max (A)

4 hits Apply

Drain-source On Resistance-Max (2)

2.5 Ω 2 3 Ω 2

Min (Ω) - Max (Ω)

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

TO-236 2 TO-236AB 2

4 hits Apply

R-PDSO-G3 4

4 hits Apply

e3 4

4 hits Apply

Manufacturer (3)

onsemi 2 Vishay Intertechnologies 1 Vishay Siliconix 1

4 hits Apply

1 4

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 4

4 hits Apply

-55.0 °C 2

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

SMALL OUTLINE 4

4 hits Apply

Active 2 Not Recommended 2

4 hits Apply

Yes 2

4 hits Apply

260 4

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

300 mW 1 350 mW 2

Min (W) - Max (W)

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply