Parametric results for: 2N6903 under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE, RADIATION HARDENED 5

8 hits Apply

DRAIN 7

8 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 7

8 hits Apply

DS Breakdown Voltage-Min (1)

200 V 7

8 hits Apply

Drain Current-Max (ID) (2)

980 mA 7 1.5 A 1

Min (A) - Max (A)

8 hits Apply

Drain-source On Resistance-Max (1)

3.65 Ω 7

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

8 hits Apply

20 pF 5

8 hits Apply

TO-205AF 7

8 hits Apply

O-MBCY-W3 7

8 hits Apply

e0 5

8 hits Apply

Manufacturer (5)

Fairchild Semiconductor Corporation 1 Harris Semiconductor 2 International Rectifier 2 Intersil Corporation 2 Thomson Consumer Electronics 1

8 hits Apply

Number of Elements (1)

1 8

8 hits Apply

Number of Terminals (1)

3 7

8 hits Apply

ENHANCEMENT MODE 8

8 hits Apply

150.0 °C 5

8 hits Apply

METAL 7

8 hits Apply

ROUND 7

8 hits Apply

CYLINDRICAL 7

8 hits Apply

Obsolete 5 Transferred 3

8 hits Apply

No 1

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

8 hits Apply

8.33 W 3

8 hits Apply

8.33 W 4

8 hits Apply

Surface Mount (1)

NO 8

8 hits Apply