Parametric results for: 2N6766-QR-B under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount Configuration (1)

SINGLE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

200 V 4

4 hits Apply

Drain Current-Max (ID) (1)

30 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

85 mΩ 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

TO-3 4

4 hits Apply

O-MBFM-P2 4

4 hits Apply

e1 2

4 hits Apply

Manufacturer (2)

TT Electronics Power and Hybrid / Semelab Limited 2 TT Electronics Resistors 2

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

2 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

METAL 4

4 hits Apply

ROUND 4

4 hits Apply

FLANGE MOUNT 4

4 hits Apply

Obsolete 4

4 hits Apply

No 1 Yes 1

4 hits Apply

NOT SPECIFIED 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply