Parametric results for: 2N6080 under RF Power Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount Transition Frequency-Nom (fT)

HIGH EFFICIENCY, WITH EMITTER BALLASTED RESISTORS 1

14 hits Apply

Collector Current-Max (IC) (4)

1 A 10 2.5 A 1 4 A 2 6 A 1

Min (A) - Max (A)

14 hits Apply

20 pF 3

14 hits Apply

Collector-Emitter Voltage-Max (1)

18 V 8

14 hits Apply

Configuration (3)

SINGLE 12 Single 1 SINGLE WITH BUILT-IN RESISTOR 1

14 hits Apply

DC Current Gain-Min (hFE) (1)

5.0 14

14 hits Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 8

14 hits Apply

O-CRPM-F4 2 O-XRPM-F4 1

14 hits Apply

e0 1

14 hits Apply

Manufacturer (10)

Advanced Semiconductor Inc 1 Digitron Semiconductors 1 Freescale Semiconductor 1 Microsemi Corporation 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 New Jersey Semiconductor Products Inc 5 Semitronics Corp 1 STMicroelectronics 1 Texas Instruments 1

14 hits Apply

Number of Elements (1)

1 13

14 hits Apply

Number of Terminals (1)

4 3

14 hits Apply

200.0 °C 9

14 hits Apply

CERAMIC, METAL-SEALED COFIRED 2 UNSPECIFIED 1

14 hits Apply

ROUND 3

14 hits Apply

POST/STUD MOUNT 3

14 hits Apply

Active 6 Obsolete 8

14 hits Apply

No 1

14 hits Apply

Polarity/Channel Type (1)

NPN 14

14 hits Apply

12 W 9

14 hits Apply

Power Gain-Min (Gp) (1)

12.0 dB 2

14 hits Apply

Surface Mount (1)

NO 9

14 hits Apply

Transition Frequency-Nom (fT) (1)

200 MHz 6

14 hits Apply