Parametric results for: 2N6052G under Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

COLLECTOR 2

3 hits Apply

Collector Current-Max (IC) (1)

12 A 3

3 hits Apply

Collector-Emitter Voltage-Max (1)

100 V 3

3 hits Apply

Configuration (2)

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 2 SINGLE 1

3 hits Apply

DC Current Gain-Min (hFE) (1)

100.0 3

3 hits Apply

TO-204AA 2

3 hits Apply

O-MBFM-P2 2

3 hits Apply

e3 2

3 hits Apply

Manufacturer (3)

New Jersey Semiconductor Products Inc 1 onsemi 1 Rochester Electronics LLC 1

3 hits Apply

NOT SPECIFIED 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

2 2

3 hits Apply

200.0 °C 1

3 hits Apply

METAL 2

3 hits Apply

ROUND 2

3 hits Apply

FLANGE MOUNT 2

3 hits Apply

Active 2 End Of Life 1

3 hits Apply

Yes 2

3 hits Apply

260 1

3 hits Apply

Polarity/Channel Type (1)

PNP 3

3 hits Apply

150 W 1

3 hits Apply

Surface Mount (1)

NO 2

3 hits Apply

Transition Frequency-Nom (fT) (1)

4 MHz 2

3 hits Apply