Parametric results for: 2N5946 under RF Power Bipolar Transistors

All Filters Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount Collector Current-Max (IC) (1)

2 A 6

6 hits Apply

45 pF 3

6 hits Apply

Collector-Emitter Voltage-Max (1)

16 V 3

6 hits Apply

Configuration (2)

SINGLE 5 Single 1

6 hits Apply

DC Current Gain-Min (hFE) (1)

20.0 6

6 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 3

6 hits Apply

O-CRPM-F4 2 O-PRPM-F4 1

6 hits Apply

e0 1

6 hits Apply

Manufacturer (6)

Advanced Semiconductor Inc 1 Freescale Semiconductor 1 Microsemi Corporation 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 STMicroelectronics 1

6 hits Apply

Number of Elements (1)

1 5

6 hits Apply

Number of Terminals (1)

4 3

6 hits Apply

200.0 °C 6

6 hits Apply

CERAMIC, METAL-SEALED COFIRED 2 PLASTIC/EPOXY 1

6 hits Apply

ROUND 3

6 hits Apply

POST/STUD MOUNT 3

6 hits Apply

Active 1 Obsolete 5

6 hits Apply

No 1

6 hits Apply

Polarity/Channel Type (1)

NPN 6

6 hits Apply

37 W 6

6 hits Apply

Power Gain-Min (Gp) (1)

6.0 dB 2

6 hits Apply

Surface Mount (1)

NO 6

6 hits Apply