Parametric results for: 2N5551J18Z under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

HIGH VOLTAGE 1

4 hits Apply

Collector Current-Max (IC) (2)

200 mA 1 600 mA 3

Min (A) - Max (A)

4 hits Apply

6 pF 1

4 hits Apply

Collector-Emitter Voltage-Max (1)

160 V 4

4 hits Apply

Configuration (1)

SINGLE 4

4 hits Apply

DC Current Gain-Min (hFE) (2)

30.0 3 80.0 1

Min - Max

4 hits Apply

TO-92 3

4 hits Apply

O-PBCY-T3 4

4 hits Apply

e3 2

4 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 2 Texas Instruments 2

4 hits Apply

NOT APPLICABLE 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 4

4 hits Apply

150.0 °C 3

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

ROUND 4

4 hits Apply

CYLINDRICAL 4

4 hits Apply

Obsolete 4

4 hits Apply

Yes 1

4 hits Apply

NOT APPLICABLE 1

4 hits Apply

Polarity/Channel Type (1)

NPN 4

4 hits Apply

350 mW 1

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply

Transition Frequency-Nom (fT) (1)

100 MHz 4

4 hits Apply