Parametric results for: 2N4957J under RF Small Signal Bipolar Transistors

All Filters Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount Collector Current-Max (IC) (1)

30 mA 6

6 hits Apply

0.8 pF 6

6 hits Apply

Collector-Emitter Voltage-Max (1)

30 V 6

6 hits Apply

Configuration (1)

SINGLE 6

6 hits Apply

DC Current Gain-Min (hFE) (1)

30.0 3

6 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 6

6 hits Apply

TO-72 6

6 hits Apply

O-MBCY-W4 6

6 hits Apply

Manufacturer (1)

Semicoa Semiconductors 6

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

4 6

6 hits Apply

200.0 °C 3

6 hits Apply

-65.0 °C 3

6 hits Apply

METAL 6

6 hits Apply

ROUND 6

6 hits Apply

CYLINDRICAL 6

6 hits Apply

Contact Manufacturer 6

6 hits Apply

Polarity/Channel Type (1)

PNP 6

6 hits Apply

200 mW 3

6 hits Apply

200 mW 3

6 hits Apply

Power Gain-Min (Gp) (1)

17.0 dB 3

6 hits Apply

Surface Mount (1)

NO 6

6 hits Apply