Parametric results for: 2N4416AC1D-JQRS.CVB under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount

HIGH RELIABILITY, LOW NOISE 2 LOW NOISE 2

4 hits Apply

Configuration (1)

SINGLE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

35 V 4

4 hits Apply

Drain-source On Resistance-Max (1)

150 Ω 2

4 hits Apply

JUNCTION 2 METAL-OXIDE SEMICONDUCTOR 2

4 hits Apply

1.2 pF 4

4 hits Apply

R-PDSO-N3 2 R-XDSO-N3 2

4 hits Apply

Manufacturer (2)

TT Electronics Power and Hybrid / Semelab Limited 2 TT Electronics Resistors 2

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 4

4 hits Apply

DEPLETION MODE 2 ENHANCEMENT MODE 2

4 hits Apply

200.0 °C 2

4 hits Apply

PLASTIC/EPOXY 2 UNSPECIFIED 2

4 hits Apply

RECTANGULAR 4

4 hits Apply

SMALL OUTLINE 4

4 hits Apply

Active 4

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

300 mW 2

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply