Parametric results for: 2N3960 under Other Transistors

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

LOGIC LEVEL COMPATIBLE 2

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COLLECTOR 1

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Collector Current-Max (IC) (1)

50 mA 1

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2.5 pF 2

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Collector-Emitter Voltage-Max (1)

12 V 16

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Configuration (2)

SINGLE 18 Single 1

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DC Current Gain-Min (hFE) (3)

25.0 2 30.0 14 40.0 3

Min - Max

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TO-18 11

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O-MBCY-W3 11 R-CDSO-N3 5

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e0 3

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Manufacturer (6)

Advanced Semiconductor Inc 2 Freescale Semiconductor 1 Microsemi Corporation 2 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 Semicoa Semiconductors 12

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Number of Elements (1)

1 18

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Number of Terminals (1)

3 16

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175.0 °C 2 200.0 °C 12

Min (°C) - Max (°C)

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CERAMIC, METAL-SEALED COFIRED 5 METAL 11

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RECTANGULAR 5 ROUND 11

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CYLINDRICAL 11 SMALL OUTLINE 5

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Contact Manufacturer 12 Obsolete 7

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No 1

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NOT SPECIFIED 6

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Polarity/Channel Type (1)

NPN 19

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750 mW 2

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400 mW 11

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Surface Mount (2)

NO 13 YES 5

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Transition Frequency-Nom (fT) (2)

1.2 MHz 6 1.6 GHz 2

Min (MHz) - Max (MHz)

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