Parametric results for: 2N3585PBFREE under Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Fall Time-Max (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

COLLECTOR 1

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Collector Current-Max (IC) (1)

2 A 1

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120 pF 1

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Collector-Emitter Voltage-Max (1)

300 V 1

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Configuration (1)

SINGLE 1

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DC Current Gain-Min (hFE) (1)

25.0 1

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3 µs 1

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TO-66 1

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O-MBFM-P2 1

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e3 1

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Manufacturer (1)

Central Semiconductor Corp 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

2 1

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200.0 °C 1

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-65.0 °C 1

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METAL 1

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ROUND 1

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FLANGE MOUNT 1

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Obsolete 1

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Polarity/Channel Type (1)

NPN 1

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35 W 1

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Surface Mount (1)

NO 1

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Transition Frequency-Nom (fT) (1)

10 MHz 1

1 hit Apply