Parametric results for: 2N1906 under Power Bipolar Transistors

All Filters Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-609 Code Manufacturer Number of Elements Operating Temperature-Max Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT) Collector Current-Max (IC) (2)

6 A 2 10 A 1

Min (A) - Max (A)

3 hits Apply

Collector-Emitter Voltage-Max (1)

100 V 1

3 hits Apply

Configuration (1)

SINGLE 3

3 hits Apply

DC Current Gain-Min (hFE) (1)

75.0 2

3 hits Apply

e0 1

3 hits Apply

Manufacturer (3)

Digitron Semiconductors 1 GPD Optoelectronics Corp 1 New Jersey Semiconductor Products Inc 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

100.0 °C 2

3 hits Apply

Active 1 Obsolete 2

3 hits Apply

Polarity/Channel Type (2)

NPN 1 PNP 2

3 hits Apply

30 W 2

3 hits Apply

Surface Mount (1)

NO 2

3 hits Apply

Transition Frequency-Nom (fT) (1)

3 MHz 2

3 hits Apply