Parametric results for: 2N1162 under Power Bipolar Transistors

All Filters Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT) Collector Current-Max (IC) (1)

25 A 5

6 hits Apply

Collector-Emitter Voltage-Max (1)

25 V 1

6 hits Apply

Configuration (1)

SINGLE 5

6 hits Apply

DC Current Gain-Min (hFE) (1)

15.0 5

6 hits Apply

TO-3 1

6 hits Apply

O-MBFM-P2 1

6 hits Apply

e0 6

6 hits Apply

Manufacturer (3)

GPD Optoelectronics Corp 2 New Jersey Semiconductor Products Inc 2 Semitronics Corp 2

6 hits Apply

Number of Elements (1)

1 5

6 hits Apply

Number of Terminals (1)

2 1

6 hits Apply

100.0 °C 5

6 hits Apply

METAL 1

6 hits Apply

ROUND 1

6 hits Apply

FLANGE MOUNT 1

6 hits Apply

Active 2 Contact Manufacturer 1 Obsolete 3

6 hits Apply

Polarity/Channel Type (1)

PNP 6

6 hits Apply

94 W 1

6 hits Apply

Surface Mount (1)

NO 5

6 hits Apply

Transition Frequency-Nom (fT) (2)

1 kHz 2 3 kHz 2

Min (MHz) - Max (MHz)

6 hits Apply