Parametric results for: 28f512-15 under Flash Memories

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Manufacturer Part Number: 28f51215
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M28F512-15XC6
STMicroelectronics
Check for Price No Obsolete 524.288 kbit 8 64KX8 5 V 15 ns FLASH YES NO 10000 Write/Erase Cycles 1 64000 65.536 k ASYNCHRONOUS 3-STATE PARALLEL 12 V 100 µA 30 µA 5.25 V 4.75 V CMOS INDUSTRIAL NO NOR TYPE R-PQCC-J32 Not Qualified e0 85 °C -40 °C 32 PLASTIC/EPOXY QCCJ LDCC32,.5X.6 RECTANGULAR CHIP CARRIER YES TIN LEAD J BEND 1.27 mm QUAD 3.56 mm 13.995 mm 11.455 mm STMICROELECTRONICS QFJ PLASTIC, LCC-32 32 not_compliant EAR99 8542.32.00.51
TMS28F512-15C2NL
Texas Instruments
Check for Price No No Obsolete 524.288 kbit 8 64KX8 5 V 150 ns FLASH BULK ERASE YES NO 100 Write/Erase Cycles 1 64000 65.536 k ASYNCHRONOUS PARALLEL 12 V 100 µA 30 µA 5.5 V 4.5 V CMOS COMMERCIAL NO NOR TYPE R-PDIP-T32 Not Qualified 70 °C NOT SPECIFIED NOT SPECIFIED 32 PLASTIC/EPOXY DIP DIP32,.6 RECTANGULAR IN-LINE NO THROUGH-HOLE 2.54 mm DUAL 5.08 mm 41.4 mm 15.24 mm TEXAS INSTRUMENTS INC DIP, DIP32,.6 not_compliant EAR99 8542.32.00.51
P28F512-150
Intel Corporation
Check for Price No Obsolete 524.288 kbit 8 64KX8 5 V 150 ns FLASH 100000 ERASE/PROGRAM CYCLES YES NO 10000 Write/Erase Cycles 1 64000 65.536 k ASYNCHRONOUS 3-STATE PARALLEL 12 V 100 µA 30 µA 5.5 V 4.5 V CMOS COMMERCIAL NO NOR TYPE R-PDIP-T32 Not Qualified e0 70 °C 32 PLASTIC/EPOXY DIP DIP32,.6 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 4.83 mm 41.91 mm 15.24 mm INTEL CORP DIP DIP, DIP32,.6 32 unknown EAR99 8542.32.00.51
AM28F512-150PE
Cypress Semiconductor
Check for Price No Active 524.288 kbit 8 64KX8 5 V 5 V 150 ns FLASH YES NO 10000 Write/Erase Cycles 64000 65.536 k PARALLEL 100 µA 30 µA CMOS MILITARY NO NOR TYPE R-PDIP-T32 Not Qualified 125 °C -55 °C 32 PLASTIC/EPOXY DIP DIP32,.6 RECTANGULAR IN-LINE NO THROUGH-HOLE 2.54 mm DUAL CYPRESS SEMICONDUCTOR CORP compliant
N28F512-150P1C4
Intel Corporation
Check for Price No Obsolete 524.288 kbit 8 64KX8 5 V 150 ns FLASH YES NO 64000 65.536 k PARALLEL 100 µA 30 µA CMOS COMMERCIAL NO NOR TYPE R-PQCC-J32 Not Qualified e0 70 °C 32 PLASTIC/EPOXY QCCJ LDCC32,.5X.6 RECTANGULAR CHIP CARRIER YES Tin/Lead (Sn/Pb) J BEND 1.27 mm QUAD INTEL CORP QCCJ, LDCC32,.5X.6 unknown EAR99 8542.32.00.51
M28F512-15XC3TR
STMicroelectronics
Check for Price Obsolete 524.288 kbit 8 64KX8 5 V 15 ns FLASH 1 64000 65.536 k ASYNCHRONOUS 3-STATE PARALLEL 12 V 5.25 V 4.75 V CMOS AUTOMOTIVE NOR TYPE R-PQCC-J32 Not Qualified 125 °C -40 °C 32 PLASTIC/EPOXY QCCJ RECTANGULAR CHIP CARRIER YES J BEND 1.27 mm QUAD 3.56 mm 13.995 mm 11.455 mm STMICROELECTRONICS QFJ PLASTIC, LCC-32 32 unknown EAR99 8542.32.00.51
TMS28F512-15C4FME4
Texas Instruments
Check for Price No No Obsolete 524.288 kbit 8 64KX8 5 V 150 ns FLASH BULK ERASE YES NO 10000 Write/Erase Cycles 1 64000 65.536 k ASYNCHRONOUS PARALLEL 12 V 100 µA 30 µA 5.5 V 4.5 V CMOS INDUSTRIAL NO NOR TYPE R-PQCC-J32 Not Qualified 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 32 PLASTIC/EPOXY QCCJ LDCC32,.5X.6 RECTANGULAR CHIP CARRIER YES J BEND 1.27 mm QUAD 3.56 mm 13.97 mm 11.43 mm TEXAS INSTRUMENTS INC QCCJ, LDCC32,.5X.6 not_compliant EAR99 8542.32.00.51
AM28F512-150C3PEB
AMD
Check for Price Obsolete 524.288 kbit 8 64KX8 5 V 150 ns FLASH 1 64000 65.536 k ASYNCHRONOUS 3-STATE PARALLEL 12 V 30 µA 5.5 V 4.5 V CMOS MILITARY NOR TYPE R-PDIP-T32 Not Qualified 125 °C -55 °C 32 PLASTIC/EPOXY DIP RECTANGULAR IN-LINE NO THROUGH-HOLE 2.54 mm DUAL 5.715 mm 42.164 mm 15.24 mm ADVANCED MICRO DEVICES INC DIP PLASTIC, DIP-32 32 unknown 3A001.A.2.C 8542.32.00.51
TMS28F512-15C3NE
Texas Instruments
Check for Price No No Obsolete 524.288 kbit 8 64KX8 5 V 150 ns FLASH BULK ERASE YES NO 1000 Write/Erase Cycles 1 64000 65.536 k ASYNCHRONOUS PARALLEL 12 V 100 µA 30 µA 5.5 V 4.5 V CMOS INDUSTRIAL NO NOR TYPE R-PDIP-T32 Not Qualified 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 32 PLASTIC/EPOXY DIP DIP32,.6 RECTANGULAR IN-LINE NO THROUGH-HOLE 2.54 mm DUAL 5.08 mm 41.4 mm 15.24 mm TEXAS INSTRUMENTS INC DIP, DIP32,.6 not_compliant EAR99 8542.32.00.51
TMS28F512-15C2FME4
Texas Instruments
Check for Price No No Obsolete 524.288 kbit 8 64KX8 5 V 150 ns FLASH BULK ERASE YES NO 100 Write/Erase Cycles 1 64000 65.536 k ASYNCHRONOUS PARALLEL 12 V 100 µA 30 µA 5.5 V 4.5 V CMOS INDUSTRIAL NO NOR TYPE R-PQCC-J32 Not Qualified 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 32 PLASTIC/EPOXY QCCJ LDCC32,.5X.6 RECTANGULAR CHIP CARRIER YES J BEND 1.27 mm QUAD 3.56 mm 13.97 mm 11.43 mm TEXAS INSTRUMENTS INC QCCJ, LDCC32,.5X.6 not_compliant EAR99 8542.32.00.51