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M28F512-15XC6
STMicroelectronics
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Check for Price | No | Obsolete | 524.288 kbit | 8 | 64KX8 | 5 V | 15 ns | FLASH | YES | NO | 10000 Write/Erase Cycles | 1 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 12 V | 100 µA | 30 µA | 5.25 V | 4.75 V | CMOS | INDUSTRIAL | NO | NOR TYPE | R-PQCC-J32 | Not Qualified | e0 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | 3.56 mm | 13.995 mm | 11.455 mm | STMICROELECTRONICS | QFJ | PLASTIC, LCC-32 | 32 | not_compliant | EAR99 | 8542.32.00.51 | |||||||
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TMS28F512-15C2NL
Texas Instruments
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Check for Price | No | No | Obsolete | 524.288 kbit | 8 | 64KX8 | 5 V | 150 ns | FLASH | BULK ERASE | YES | NO | 100 Write/Erase Cycles | 1 | 64000 | 65.536 k | ASYNCHRONOUS | PARALLEL | 12 V | 100 µA | 30 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | NO | NOR TYPE | R-PDIP-T32 | Not Qualified | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 32 | PLASTIC/EPOXY | DIP | DIP32,.6 | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 41.4 mm | 15.24 mm | TEXAS INSTRUMENTS INC | DIP, DIP32,.6 | not_compliant | EAR99 | 8542.32.00.51 | |||||||||
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P28F512-150
Intel Corporation
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Check for Price | No | Obsolete | 524.288 kbit | 8 | 64KX8 | 5 V | 150 ns | FLASH | 100000 ERASE/PROGRAM CYCLES | YES | NO | 10000 Write/Erase Cycles | 1 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 12 V | 100 µA | 30 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | NO | NOR TYPE | R-PDIP-T32 | Not Qualified | e0 | 70 °C | 32 | PLASTIC/EPOXY | DIP | DIP32,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 4.83 mm | 41.91 mm | 15.24 mm | INTEL CORP | DIP | DIP, DIP32,.6 | 32 | unknown | EAR99 | 8542.32.00.51 | |||||||
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AM28F512-150PE
Cypress Semiconductor
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Check for Price | No | Active | 524.288 kbit | 8 | 64KX8 | 5 V | 5 V | 150 ns | FLASH | YES | NO | 10000 Write/Erase Cycles | 64000 | 65.536 k | PARALLEL | 100 µA | 30 µA | CMOS | MILITARY | NO | NOR TYPE | R-PDIP-T32 | Not Qualified | 125 °C | -55 °C | 32 | PLASTIC/EPOXY | DIP | DIP32,.6 | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | CYPRESS SEMICONDUCTOR CORP | compliant | ||||||||||||||||||||||
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N28F512-150P1C4
Intel Corporation
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Check for Price | No | Obsolete | 524.288 kbit | 8 | 64KX8 | 5 V | 150 ns | FLASH | YES | NO | 64000 | 65.536 k | PARALLEL | 100 µA | 30 µA | CMOS | COMMERCIAL | NO | NOR TYPE | R-PQCC-J32 | Not Qualified | e0 | 70 °C | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | Tin/Lead (Sn/Pb) | J BEND | 1.27 mm | QUAD | INTEL CORP | QCCJ, LDCC32,.5X.6 | unknown | EAR99 | 8542.32.00.51 | ||||||||||||||||||||
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M28F512-15XC3TR
STMicroelectronics
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Check for Price | Obsolete | 524.288 kbit | 8 | 64KX8 | 5 V | 15 ns | FLASH | 1 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 12 V | 5.25 V | 4.75 V | CMOS | AUTOMOTIVE | NOR TYPE | R-PQCC-J32 | Not Qualified | 125 °C | -40 °C | 32 | PLASTIC/EPOXY | QCCJ | RECTANGULAR | CHIP CARRIER | YES | J BEND | 1.27 mm | QUAD | 3.56 mm | 13.995 mm | 11.455 mm | STMICROELECTRONICS | QFJ | PLASTIC, LCC-32 | 32 | unknown | EAR99 | 8542.32.00.51 | |||||||||||||||||
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TMS28F512-15C4FME4
Texas Instruments
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Check for Price | No | No | Obsolete | 524.288 kbit | 8 | 64KX8 | 5 V | 150 ns | FLASH | BULK ERASE | YES | NO | 10000 Write/Erase Cycles | 1 | 64000 | 65.536 k | ASYNCHRONOUS | PARALLEL | 12 V | 100 µA | 30 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | NO | NOR TYPE | R-PQCC-J32 | Not Qualified | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | J BEND | 1.27 mm | QUAD | 3.56 mm | 13.97 mm | 11.43 mm | TEXAS INSTRUMENTS INC | QCCJ, LDCC32,.5X.6 | not_compliant | EAR99 | 8542.32.00.51 | ||||||||
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AM28F512-150C3PEB
AMD
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Check for Price | Obsolete | 524.288 kbit | 8 | 64KX8 | 5 V | 150 ns | FLASH | 1 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 12 V | 30 µA | 5.5 V | 4.5 V | CMOS | MILITARY | NOR TYPE | R-PDIP-T32 | Not Qualified | 125 °C | -55 °C | 32 | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | 5.715 mm | 42.164 mm | 15.24 mm | ADVANCED MICRO DEVICES INC | DIP | PLASTIC, DIP-32 | 32 | unknown | 3A001.A.2.C | 8542.32.00.51 | ||||||||||||||||
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TMS28F512-15C3NE
Texas Instruments
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Check for Price | No | No | Obsolete | 524.288 kbit | 8 | 64KX8 | 5 V | 150 ns | FLASH | BULK ERASE | YES | NO | 1000 Write/Erase Cycles | 1 | 64000 | 65.536 k | ASYNCHRONOUS | PARALLEL | 12 V | 100 µA | 30 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | NO | NOR TYPE | R-PDIP-T32 | Not Qualified | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 32 | PLASTIC/EPOXY | DIP | DIP32,.6 | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 41.4 mm | 15.24 mm | TEXAS INSTRUMENTS INC | DIP, DIP32,.6 | not_compliant | EAR99 | 8542.32.00.51 | ||||||||
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TMS28F512-15C2FME4
Texas Instruments
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Check for Price | No | No | Obsolete | 524.288 kbit | 8 | 64KX8 | 5 V | 150 ns | FLASH | BULK ERASE | YES | NO | 100 Write/Erase Cycles | 1 | 64000 | 65.536 k | ASYNCHRONOUS | PARALLEL | 12 V | 100 µA | 30 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | NO | NOR TYPE | R-PQCC-J32 | Not Qualified | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | J BEND | 1.27 mm | QUAD | 3.56 mm | 13.97 mm | 11.43 mm | TEXAS INSTRUMENTS INC | QCCJ, LDCC32,.5X.6 | not_compliant | EAR99 | 8542.32.00.51 |