Parametric results for: 28c04f25j under EEPROMs

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Manufacturer Part Number: 28c04f25
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AT28C04F-25DM/883
Atmel Corporation
Check for Price No No Obsolete 4.096 kbit 8 512X8 5 V 250 ns EEPROM BULK ERASE; AUTOMATIC WRITE NO YES 10000 Write/Erase Cycles 1 512 512 words ASYNCHRONOUS 3-STATE PARALLEL 5 V 100 µA 45 µA 5.5 V 4.5 V CMOS MILITARY NO 200 µs R-GDIP-T24 Not Qualified e0 125 °C -55 °C 38535Q/M;38534H;883B 24 CERAMIC, GLASS-SEALED DIP DIP24,.6 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 5.72 mm 32.15 mm 15.24 mm ATMEL CORP DIP DIP, DIP24,.6 24 compliant 3A001.A.2.C 8542.32.00.51
AT28C04F-25LI
Atmel Corporation
Check for Price No No Obsolete 4.096 kbit 8 512X8 5 V 250 ns EEPROM AUTOMATIC WRITE NO YES 10000 Write/Erase Cycles 1 512 512 words ASYNCHRONOUS 3-STATE PARALLEL 5 V 3 mA 45 µA 5.5 V 4.5 V CMOS INDUSTRIAL NO 200 µs R-CQCC-N32 Not Qualified e0 85 °C -40 °C 32 CERAMIC, METAL-SEALED COFIRED QCCN LCC32,.45X.55 RECTANGULAR CHIP CARRIER YES TIN LEAD NO LEAD 1.27 mm QUAD 2.54 mm 13.97 mm 11.43 mm ATMEL CORP QFJ QCCN, LCC32,.45X.55 32 compliant EAR99 8542.32.00.51
AT28C04F-25JC
Atmel Corporation
Check for Price Transferred 4.096 kbit 8 512X8 5 V 250 ns EEPROM AUTOMATIC WRITE 1 512 512 words ASYNCHRONOUS 3-STATE PARALLEL 5 V 5.5 V 4.5 V CMOS COMMERCIAL R-PQCC-J32 Not Qualified 70 °C 32 PLASTIC/EPOXY QCCJ RECTANGULAR CHIP CARRIER YES J BEND 1.27 mm QUAD 3.55 mm 13.97 mm 11.43 mm ATMEL CORP QFJ QCCJ, 32 unknown EAR99 8542.32.00.51
AT28C04F-25DC
Atmel Corporation
Check for Price No No Obsolete 4.096 kbit 8 512X8 5 V 250 ns EEPROM AUTOMATIC WRITE NO YES 10000 Write/Erase Cycles 1 512 512 words ASYNCHRONOUS 3-STATE PARALLEL 5 V 100 µA 30 µA 5.5 V 4.5 V CMOS COMMERCIAL NO 200 µs R-GDIP-T24 Not Qualified e0 70 °C 24 CERAMIC, GLASS-SEALED DIP DIP24,.6 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 5.72 mm 32.15 mm 15.24 mm ATMEL CORP DIP DIP, DIP24,.6 24 compliant EAR99 8542.32.00.51
AT28C04F-25LM
Atmel Corporation
Check for Price No No Obsolete 4.096 kbit 8 512X8 5 V 250 ns EEPROM AUTOMATIC WRITE NO YES 10000 Write/Erase Cycles 1 512 512 words ASYNCHRONOUS 3-STATE PARALLEL 5 V 3 mA 45 µA 5.5 V 4.5 V CMOS MILITARY NO 200 µs R-CQCC-N32 Not Qualified e0 125 °C -55 °C 32 CERAMIC, METAL-SEALED COFIRED QCCN LCC32,.45X.55 RECTANGULAR CHIP CARRIER YES TIN LEAD NO LEAD 1.27 mm QUAD 2.54 mm 13.97 mm 11.43 mm ATMEL CORP QFJ QCCN, LCC32,.45X.55 32 compliant 3A001.A.2.C 8542.32.00.51
AT28C04F-25DI
Atmel Corporation
Check for Price No No Obsolete 4.096 kbit 8 512X8 5 V 250 ns EEPROM AUTOMATIC WRITE NO YES 10000 Write/Erase Cycles 1 512 512 words ASYNCHRONOUS 3-STATE PARALLEL 5 V 100 µA 45 µA 5.5 V 4.5 V CMOS INDUSTRIAL NO 200 µs R-GDIP-T24 Not Qualified e0 85 °C -40 °C 24 CERAMIC, GLASS-SEALED DIP DIP24,.6 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 5.72 mm 32.15 mm 15.24 mm ATMEL CORP DIP DIP, DIP24,.6 24 compliant EAR99 8542.32.00.51
28C04F-25/S
Vishay Semiconductors
Check for Price Obsolete 4.096 kbit 8 512X8 5 V 250 ns EEPROM NO YES 100000 Write/Erase Cycles 1 512 512 words ASYNCHRONOUS PARALLEL 100 µA 30 µA CMOS COMMERCIAL NO 200 µs Not Qualified 70 °C MIL-STD-883 DIE OR CHIP GENERAL SEMICONDUCTOR INC , DIE OR CHIP unknown EAR99 8542.32.00.51
AT28C04F-25JCT/R
Atmel Corporation
Check for Price Obsolete 4.096 kbit 8 512X8 5 V 250 ns EEPROM AUTOMATIC WRITE 1 512 512 words ASYNCHRONOUS 3-STATE PARALLEL 5 V 5.5 V 4.5 V CMOS COMMERCIAL R-PQCC-J32 Not Qualified 70 °C 32 PLASTIC/EPOXY QCCJ RECTANGULAR CHIP CARRIER YES J BEND 1.27 mm QUAD 3.55 mm 13.97 mm 11.43 mm ATMEL CORP QFJ QCCJ, 32 unknown EAR99 8542.32.00.51
28C04F-25MR/D
Vishay Semiconductors
Check for Price No Obsolete 4.096 kbit 8 512X8 5 V 250 ns EEPROM NO YES 100000 Write/Erase Cycles 1 512 512 words ASYNCHRONOUS PARALLEL 100 µA 30 µA CMOS MILITARY NO 200 µs R-XDIP-T24 Not Qualified e0 125 °C -55 °C 38535Q/M;38534H;883B 24 CERAMIC DIP DIP24,.6 RECTANGULAR IN-LINE NO Tin/Lead (Sn/Pb) THROUGH-HOLE 2.54 mm DUAL GENERAL SEMICONDUCTOR INC DIP, DIP24,.6 unknown 3A001.A.2.C 8542.32.00.51
28C04F-25I/K
Vishay Semiconductors
Check for Price No Obsolete 4.096 kbit 8 512X8 5 V 250 ns EEPROM NO YES 100000 Write/Erase Cycles 1 512 512 words ASYNCHRONOUS PARALLEL 100 µA 30 µA CMOS INDUSTRIAL NO 200 µs R-XQCC-N32 Not Qualified e0 85 °C -40 °C MIL-STD-883 32 CERAMIC QCCN LCC32,.45X.55 RECTANGULAR CHIP CARRIER YES Tin/Lead (Sn/Pb) NO LEAD 1.27 mm QUAD GENERAL SEMICONDUCTOR INC QCCN, LCC32,.45X.55 unknown EAR99 8542.32.00.51