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AT28C04F-25DM/883
Atmel Corporation
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Check for Price | No | No | Obsolete | 4.096 kbit | 8 | 512X8 | 5 V | 250 ns | EEPROM | BULK ERASE; AUTOMATIC WRITE | NO | YES | 10000 Write/Erase Cycles | 1 | 512 | 512 words | ASYNCHRONOUS | 3-STATE | PARALLEL | 5 V | 100 µA | 45 µA | 5.5 V | 4.5 V | CMOS | MILITARY | NO | 200 µs | R-GDIP-T24 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 24 | CERAMIC, GLASS-SEALED | DIP | DIP24,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.72 mm | 32.15 mm | 15.24 mm | ATMEL CORP | DIP | DIP, DIP24,.6 | 24 | compliant | 3A001.A.2.C | 8542.32.00.51 | ||
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AT28C04F-25LI
Atmel Corporation
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Check for Price | No | No | Obsolete | 4.096 kbit | 8 | 512X8 | 5 V | 250 ns | EEPROM | AUTOMATIC WRITE | NO | YES | 10000 Write/Erase Cycles | 1 | 512 | 512 words | ASYNCHRONOUS | 3-STATE | PARALLEL | 5 V | 3 mA | 45 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | NO | 200 µs | R-CQCC-N32 | Not Qualified | e0 | 85 °C | -40 °C | 32 | CERAMIC, METAL-SEALED COFIRED | QCCN | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | YES | TIN LEAD | NO LEAD | 1.27 mm | QUAD | 2.54 mm | 13.97 mm | 11.43 mm | ATMEL CORP | QFJ | QCCN, LCC32,.45X.55 | 32 | compliant | EAR99 | 8542.32.00.51 | |||
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AT28C04F-25JC
Atmel Corporation
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Check for Price | Transferred | 4.096 kbit | 8 | 512X8 | 5 V | 250 ns | EEPROM | AUTOMATIC WRITE | 1 | 512 | 512 words | ASYNCHRONOUS | 3-STATE | PARALLEL | 5 V | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PQCC-J32 | Not Qualified | 70 °C | 32 | PLASTIC/EPOXY | QCCJ | RECTANGULAR | CHIP CARRIER | YES | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | ATMEL CORP | QFJ | QCCJ, | 32 | unknown | EAR99 | 8542.32.00.51 | ||||||||||||||||
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AT28C04F-25DC
Atmel Corporation
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Check for Price | No | No | Obsolete | 4.096 kbit | 8 | 512X8 | 5 V | 250 ns | EEPROM | AUTOMATIC WRITE | NO | YES | 10000 Write/Erase Cycles | 1 | 512 | 512 words | ASYNCHRONOUS | 3-STATE | PARALLEL | 5 V | 100 µA | 30 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | NO | 200 µs | R-GDIP-T24 | Not Qualified | e0 | 70 °C | 24 | CERAMIC, GLASS-SEALED | DIP | DIP24,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.72 mm | 32.15 mm | 15.24 mm | ATMEL CORP | DIP | DIP, DIP24,.6 | 24 | compliant | EAR99 | 8542.32.00.51 | ||||
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AT28C04F-25LM
Atmel Corporation
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Check for Price | No | No | Obsolete | 4.096 kbit | 8 | 512X8 | 5 V | 250 ns | EEPROM | AUTOMATIC WRITE | NO | YES | 10000 Write/Erase Cycles | 1 | 512 | 512 words | ASYNCHRONOUS | 3-STATE | PARALLEL | 5 V | 3 mA | 45 µA | 5.5 V | 4.5 V | CMOS | MILITARY | NO | 200 µs | R-CQCC-N32 | Not Qualified | e0 | 125 °C | -55 °C | 32 | CERAMIC, METAL-SEALED COFIRED | QCCN | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | YES | TIN LEAD | NO LEAD | 1.27 mm | QUAD | 2.54 mm | 13.97 mm | 11.43 mm | ATMEL CORP | QFJ | QCCN, LCC32,.45X.55 | 32 | compliant | 3A001.A.2.C | 8542.32.00.51 | |||
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AT28C04F-25DI
Atmel Corporation
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Check for Price | No | No | Obsolete | 4.096 kbit | 8 | 512X8 | 5 V | 250 ns | EEPROM | AUTOMATIC WRITE | NO | YES | 10000 Write/Erase Cycles | 1 | 512 | 512 words | ASYNCHRONOUS | 3-STATE | PARALLEL | 5 V | 100 µA | 45 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | NO | 200 µs | R-GDIP-T24 | Not Qualified | e0 | 85 °C | -40 °C | 24 | CERAMIC, GLASS-SEALED | DIP | DIP24,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.72 mm | 32.15 mm | 15.24 mm | ATMEL CORP | DIP | DIP, DIP24,.6 | 24 | compliant | EAR99 | 8542.32.00.51 | |||
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28C04F-25/S
Vishay Semiconductors
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Check for Price | Obsolete | 4.096 kbit | 8 | 512X8 | 5 V | 250 ns | EEPROM | NO | YES | 100000 Write/Erase Cycles | 1 | 512 | 512 words | ASYNCHRONOUS | PARALLEL | 100 µA | 30 µA | CMOS | COMMERCIAL | NO | 200 µs | Not Qualified | 70 °C | MIL-STD-883 | DIE OR CHIP | GENERAL SEMICONDUCTOR INC | , DIE OR CHIP | unknown | EAR99 | 8542.32.00.51 | |||||||||||||||||||||||||||
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AT28C04F-25JCT/R
Atmel Corporation
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Check for Price | Obsolete | 4.096 kbit | 8 | 512X8 | 5 V | 250 ns | EEPROM | AUTOMATIC WRITE | 1 | 512 | 512 words | ASYNCHRONOUS | 3-STATE | PARALLEL | 5 V | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PQCC-J32 | Not Qualified | 70 °C | 32 | PLASTIC/EPOXY | QCCJ | RECTANGULAR | CHIP CARRIER | YES | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | ATMEL CORP | QFJ | QCCJ, | 32 | unknown | EAR99 | 8542.32.00.51 | ||||||||||||||||
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28C04F-25MR/D
Vishay Semiconductors
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Check for Price | No | Obsolete | 4.096 kbit | 8 | 512X8 | 5 V | 250 ns | EEPROM | NO | YES | 100000 Write/Erase Cycles | 1 | 512 | 512 words | ASYNCHRONOUS | PARALLEL | 100 µA | 30 µA | CMOS | MILITARY | NO | 200 µs | R-XDIP-T24 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 24 | CERAMIC | DIP | DIP24,.6 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | GENERAL SEMICONDUCTOR INC | DIP, DIP24,.6 | unknown | 3A001.A.2.C | 8542.32.00.51 | |||||||||||||
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28C04F-25I/K
Vishay Semiconductors
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Check for Price | No | Obsolete | 4.096 kbit | 8 | 512X8 | 5 V | 250 ns | EEPROM | NO | YES | 100000 Write/Erase Cycles | 1 | 512 | 512 words | ASYNCHRONOUS | PARALLEL | 100 µA | 30 µA | CMOS | INDUSTRIAL | NO | 200 µs | R-XQCC-N32 | Not Qualified | e0 | 85 °C | -40 °C | MIL-STD-883 | 32 | CERAMIC | QCCN | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | YES | Tin/Lead (Sn/Pb) | NO LEAD | 1.27 mm | QUAD | GENERAL SEMICONDUCTOR INC | QCCN, LCC32,.45X.55 | unknown | EAR99 | 8542.32.00.51 |