Parametric results for: 28HC256 under EEPROMs

All Filters Access Time-Max Additional Feature Command User Interface Data Polling Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Page Size Supply Voltage-Nom (Vsup) Access Time-Max (5)

70 ns 302 90 ns 477 120 ns 558 150 ns 133 200 ns 2

Min (ns) - Max (ns)

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10000 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS 6 100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION 352 AUTOMATIC WRITE 472 AUTOMATIC WRITE; PAGE WRITE 45 AUTOMATIC WRITE;PAGE WRITE;BULK ERASE 126 BULK ERASE; PAGE WRITE 8 HARDWARE & SOFTWARE DATA PROTECTION; DATA RETENTION = 10 YEARS 46 LG-MAX; WD-MAX 8

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NO 868

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YES 868

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10 76 20 3 100 356

Min - Max

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10000.0 Write/Erase Cycles 431 100000.0 Write/Erase Cycles 233 1000000.0 Write/Erase Cycles 294

Min (Write/EraseCycles) - Max (Write/EraseCycles)

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R-CDFP-F28 175 R-CDIP-T28 58 R-CPGA-P28 138 R-CQCC-J32 8 R-CQCC-N32 227 R-GDIP-T28 156 R-PDIP-T28 109 R-PDSO-G28 205 R-PDSO-G32 44 R-PQCC-J32 266 R-XDFP-F28 6 R-XDIP-T28 6 R-XPGA-P28 39 R-XQCC-N32 6 R-XUUC-N28 3 R-XUUC-N30 1 X-XUUC-N30 4 X-XUUC-N34 6

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e0 923 e3 254 e4 6

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11.8 mm 68 12.4 mm 44 13.95 mm 10 13.965 mm 12 13.97 mm 438 16.5 mm 72 16.51 mm 75 17.9 mm 137 18.285 mm 15 18.288 mm 34 18.3 mm 70 18.8 mm 8 36.32 mm 8 36.45 mm 19 36.95 mm 12 37.0205 mm 40 37.15 mm 18 37.215 mm 12 37.25 mm 78 37.4 mm 26

Min (mm) - Max (mm)

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Manufacturer (10)

Atmel Corporation 515 e2v technologies 37 Force Technologies Ltd 42 Intersil Corporation 212 LSI Corporation 198 Microchip Technology Inc 122 Micross Components 40 Pyramid Semiconductor Corporation 40 Renesas Electronics Corporation 44 Xicor Inc 243

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Memory Density (1)

262.144 kbit 1,471

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EEPROM 1,492

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Memory Width (1)

8 1,471

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1 244 2 135 3 129 5 7

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1.0 1,415

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1 8

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28 895 30 5 32 551 34 6

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32.768 k 1,471

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32000.0 1,471

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ASYNCHRONOUS 1,415

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70.0 °C 373 85.0 °C 562 125.0 °C 534

Min (°C) - Max (°C)

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-55.0 °C 534 -40.0 °C 562 0.0 °C 373

Min (°C) - Max (°C)

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Organization (1)

32KX8 1,471

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3-STATE 767

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CERAMIC 42 CERAMIC, GLASS-SEALED 156 CERAMIC, METAL-SEALED COFIRED 612 PLASTIC/EPOXY 624 UNSPECIFIED 23

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DFP 181 DIE 14 DIP 305 LSSOP 3 PGA 177 QCCJ 274 QCCN 233 SOP 137 TSOP 6 TSOP1 90 TSSOP 13

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DIE OR CHIP 19 DIP28,.6 216 FL28,.4 122 LCC32,.45X.55 134 LDCC32,.5X.6 118 PGA28(UNSPEC) 40 PGA28,5X6 78 SOP28,.4 54 SOP28,.45 18 TSSOP28,.53,22 37 TSSOP32,.56,20 32

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RECTANGULAR 1,447 UNSPECIFIED 10

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CHIP CARRIER 507 FLATPACK 181 GRID ARRAY 177 IN-LINE 329 SMALL OUTLINE 137 SMALL OUTLINE, LOW PROFILE, SHRINK PITCH 3 SMALL OUTLINE, THIN PROFILE 96 SMALL OUTLINE, THIN PROFILE, SHRINK PITCH 13 UNCASED CHIP 14

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128 words 300 64 words 568

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Supply Voltage-Nom (Vsup) (1)

5 V 1,475

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